View HAT2195R_1247293.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HAT2195R
Silicon N Channel Power MOS FET Power Switching
REJ03G0060-0300Z Rev.3.00 Apr.01.2004
Features
* * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.6 m typ. (at VGS = 10 V)
Outline
SOP-8
56 7 8 DD D D 5 76
8
4 G 3 12 4
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-a Note3 Tch Tstg Ratings 30 20 18 144 18 18 32.4 2.5 50 150 -55 to +150 Unit V V A A A A mJ W C/W C C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Rev.3.00, Apr.01.2004, page 1 of 6
HAT2195R
Electrical Characteristics
(Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.0 -- -- 25 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 4.6 5.8 42 3400 785 250 1.0 23 10 5.5 12 16 50 6.5 0.80 32 Max -- 0.1 1 2.5 5.8 8.4 -- -- -- -- -- -- -- -- -- -- -- -- 1.04 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 9 A, VGS = 10 V Note4 ID = 9 A, VGS = 4.5 V Note4 ID = 9 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 18 A VGS = 10 V, ID = 9 A VDD 10 V RL = 1.11 Rg = 4.7 IF = 18 A, VGS = 0 Note4 IF = 18 A, VGS = 0 diF/ dt = 100 A/ s
Main Characteristics
Power vs. Temperature Derating 4.0 500 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 Maximum Safe Operation Area
10 s
Pch (W)
ID (A)
100
PW
1m
10
0
10
Channel Dissipation
Drain Current
DC
=1
n
s
s
Op
0m
2.0
era
s
1.0
(P WN 1 Operation in < 1 ote 0s 5 this area is ) limited by RDS(on) 0.1
tio
0
50
100
150 Ta (C)
200
Ambient Temperature
0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm)
Ta = 25 C 1 shot Pulse
Rev.3.00, Apr.01.2004, page 2 of 6
HAT2195R
Typical Output Characteristics 50 10 V 4V 2.8 V 50 V DS = 10 V Pulse Test 40
ID (A)
Typical Transfer Characteristics
ID (A)
40
30
Drain Current
2.6 V
30 25C Tc = 75C -25C
20
VGS = 2.4 V
Drain Current
20
10
10
Pulse Test 0 2 4 6 Drain to Source Voltage 8 10 VDS (V) 0 1 2 3 Gate to Source Voltage 5 4 VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
VDS(on) (mV)
200
Pulse Test
160
Drain to Source On State Resistance RDS(on) (m)
Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 VGS = 4.5 V 5 10 V 2 1 1 3 10 30 100 300 Drain Current ID (A) 1000
Drain to Source Voltage
120 ID = 20 A 80 10 A 40 5A
0
4 8 12 Gate to Source Voltage
16 20 VGS (V)
Forward Transfer Admittance |yfs| (S)
Drain to Source On State Resistance RDS(on) (m)
Static Drain to Source on State Resistance vs. Temperature 12 Pulse Test 10 5 A, 10 A 8 VGS = 4.5 V 6 ID = 5 A, 10 A, 20 A 10 V 2 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) 20 A
Forward Transfer Admittance vs. Drain Current 1000 300 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 VDS = 10 V Pulse Test 10 30 100 25 C 75 C Tc = -25 C
4
Drain Current
ID (A)
Rev.3.00, Apr.01.2004, page 3 of 6
HAT2195R
Body Drain Diode Reverse Recovery Time 100
Reverse Recovery Time trr (ns)
Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 3000 1000 300 100 30 10 0 Coss Crss
50
20 di/dt = 100 A/s VGS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics
Capacitance C (pF)
10 0.1
VGS = 0 f = 1 MHz 5 10 15 20 25 (V) 30
Drain to Source Voltage VDS Switching Characteristics
VDS (V)
50
Switching Time t (ns)
40
VGS
VGS (V)
ID = 18 A
20
1000 300 100 30 10 3 1 0.1 td(off) tr
16
Drain to Source Voltage
30
VDS
12 VDD = 25 V 10 V 5V 8 VDD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage 4 0 100
Gate to Source Voltage
20
td(on) tf VGS = 10 V, VDS = 10 V Rg = 4.7 , duty < 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100
10
0
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
50
Reverse Drain Current IDR (A)
50 IAP = 18 A VDD = 15 V duty < 0.1 % Rg > 50
40
10 V 5V VGS = -5.0 V
40
30
30
20
20
10 Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage
10 0 25
50 75 100 125 150 Channel Temperature Tch (C)
Rev.3.00, Apr.01.2004, page 4 of 6
HAT2195R
Normalized Transient Thermal Impedance vs. Pulse Width 10
Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
ch - f(t) = s (t) x ch - f ch - f = 83.3C/W, Ta = 25C When using the glass epoxy board (FR4 40x40x1.6 mm)
PDM
0.001
o 1sh tp uls e
D=
PW T
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 L * IAP2 * VDSS VDSS - VDD
VDS Monitor
L I AP Monitor
V (BR)DSS IAP VDD ID VDS
Rg Vin 15 V
D. U. T
50 0 VDD
Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V VDS = 10 V Vout Monitor
Switching Time Waveform
90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
Vout
Rev.3.00, Apr.01.2004, page 5 of 6
HAT2195R
Package Dimensions
As of January, 2003
Unit: mm
4.90 5.3 Max 5 8
1
4
3.95
*0.22 0.03 0.20 0.03
1.75 Max
0.75 Max
6.10 - 0.30
+ 0.10
1.08 0 - 8
+ 0.67
0.14 - 0.04
+ 0.11
1.27
0.60 - 0.20
*0.42 0.08 0.40 0.06
0.15 0.25 M
*Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms -- 0.085 g
Ordering Information
Part Name HAT2195R-EL-E Quantity 2500pcs Shipping Container Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00, Apr.01.2004, page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0

▲Up To Search▲

Price & Availability of HAT2195R

	To Download HAT2195R Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .